| 31/Mar/2020 | 85437090 | AXG-5000III-27M-A2-2 # & Plasma High-frequency Power Supply AXG-5000III-27M-A2 # & VN | Japan | pcs/piece | 1.00 | 11,960.00 | 11,960.00 | View Importer | View Supplier |
| 27/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 500.00 | 4,235.00 | 8.47 | View Importer | View Supplier |
| 26/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 383.00 | 2,906.97 | 7.59 | View Importer | View Supplier |
| 26/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 1,000.00 | 8,470.00 | 8.47 | View Importer | View Supplier |
| 26/Mar/2020 | 85437090 | TX06-9001-00-1-2 # & Plasma high frequency power machine TX06-9001-00-1 # & VN | Japan | pcs/piece | 1.00 | 1,951.00 | 1,951.00 | View Importer | View Supplier |
| 26/Mar/2020 | 85437090 | TX20-D000-1AS-0CB # & Plasma high frequency power machine TX20-D000-1AS-0CB # & VN | Japan | pcs/piece | 2.00 | 9,024.00 | 4,512.00 | View Importer | View Supplier |
| 26/Mar/2020 | 90303200 | 13.56MHz high current power meter from high frequency generator (220V voltage, maximum power consumption 24W, display screen). Model: AW-8000II. Used goods # & JP | Japan | pcs/piece | 1.00 | 565.92 | 565.92 | View Importer | View Supplier |
| 26/Mar/2020 | 90303200 | 13.56MHz high current power meter from high frequency generator (220V voltage, maximum power consumption 24W, display screen). Model: AW-8000II. Used goods # & JP | Japan | pcs/piece | 1.00 | 1,574.41 | 1,574.41 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 332.00 | 2,519.88 | 7.59 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 325.00 | 2,466.75 | 7.59 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | P0275 # & Semiconductor base (in antenna pan) FSX017LG / High Electron Mobility Transistor (HEMT). Switching power: 11W # & VN | Japan | pcs/piece | 2,199.00 | 1,825.17 | 0.83 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 16W # & VN | Japan | pcs/piece | 294.00 | 2,422.56 | 8.24 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 500.00 | 4,235.00 | 8.47 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | U0020 # & Semiconductor Base (in antenna pan) FHX36LP / High Electron Mobility Transistor (HEMT). Switching power: 10W # & VN | Japan | pcs/piece | 2,500.00 | 1,700.00 | 0.68 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | D0693 # & Semiconductor base withstand high voltage in antenna pan - SGN21C050MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 194.00 | 1,482.16 | 7.64 | View Importer | View Supplier |
